Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET

ABSTRACT

A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer (BSL) with bottom drain electrode. The BSL has a proximal bulk semiconductor wall (PBSW) supporting drain-source voltage (DSV) and separating TSMEC from trench MOSFET. The TSMEC has oxide-filled large deep trench (OFLDT) bounded by PBSW and a distal bulk semiconductor wall (DBSW). The OFLDT includes a large deep oxide trench into the BSL and embedded capacitive structures (EBCS) located inside the large deep oxide trench and between PBSW and DBSW for spatially spreading the DSV across them. In one embodiment, the EBCS contains interleaved conductive embedded polycrystalline semiconductor regions (EPSR) and oxide columns (OXC) of the OFLDT, a proximal EPSR next to PBSW is connected to an active upper source region and a distal EPSR next to DBSW is connected to the DBSW.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of a pending US patentapplication entitled “Termination Structure with Multiple EmbeddedPotential Spreading Capacitive Structures for Trench MOSFET and Method”application Ser. No. 13/712,980 filing date: Dec. 13, 2012, inventorXiaobin Wang et al. The above contents are incorporated herein byreference for any and all purposes.

FIELD OF INVENTION

This invention relates generally to the field of power semiconductordevice structure. More specifically, the present invention is directedto termination structures for trench MOSFET and their fabricationmethod.

BACKGROUND OF THE INVENTION

Power semiconductor devices have many industrial applications, such aspower amplifiers, power convertors, low noise amplifiers and digitalIntegrated Circuits (IC) to name a few. Some examples of powersemiconductor devices are Schottky diode, Metal-Oxide-SemiconductorField Effect Transistor (MOSFET), Insulated Gate Bipolar Transistor(IGBT) and double diffused Metal-Oxide-Semiconductor Transistor (DMOS).The termination structure of power semiconductor devices often requiresa high quality semiconductor oxide layer such as silicon oxide. Formedium to high voltage devices, a high quality semiconductor oxide layerthat is both deep and wide (for example, of the order of ten microns) isoften required to insure a high breakdown voltage (BV) and low leakagecurrent I_(lk). While semiconductor oxide layers of thickness around 1micron can be thermally formed or deposited, it can take more than twohours process time just to form a 0.5 micron thick thermal oxide.Besides being of lower quality, a deposited oxide thickness of a fewmicrons is already considered quite thick in that its dielectricproperty non-uniformity can be a problem. Manufacturing issues withforming a deep and wide oxide filled trench include processing time,non-uniformity, and high stress levels.

FIG. 8A illustrates U.S. Pat. No. 5,998,833 entitled: “PowerSemiconductor Devices having Improved High Frequency Switching andBreakdown Characteristics” by Baliga, granted on Dec. 7, 1999. Thedisclosed integrated power semiconductor device 300′ includes adjacentDEVICE CELLS region and EDGE TERMINATION region and the integrated powersemiconductor device 300′ was stated to have improved high frequencyswitching performance, improved edge termination characteristics andreduced on-state resistance and include MOSFET unit cells with uppertrench-based gate electrodes (e.g., 126) and lower trench-based sourceelectrodes (not shown). The use of the trench-based source electrodeinstead of a larger gate electrode reduces the gate-to-drain capacitance(C.sub.GD) of the MOSFET and improves switching speed by reducing theamount of gate charging and discharging current that is needed duringhigh frequency operation. It is pointed out that, due to the substantialstructural difference between the DEVICE CELLS region and the EDGETERMINATION region, an extra body mask is needed to block body implant(e.g., the implant forming P body region 116) from the EDGE TERMINATIONregion.

FIG. 8B1 and FIG. 8B2 are respectively FIG. 2D and FIG. 2E excerptedfrom U.S. application Ser. No. 12/637,988 illustrating a proceduralportion of simultaneously creating a semiconductor device structure withan oxide-filled large deep trench termination portion and anotherportion of deep active device trenches. Due to the substantialstructural difference between the active device trench top area (ADTTA)3 b and the large trench top area (LTTA) 2 b, an extra windowed mask 110b is needed to block processing steps for the ADTTA 3 b from affectingthe LTTA 2 b. Therefore, there exists a continued desire to create ahighly functional power semiconductor device with an integratedtermination structure that is structurally flexible and also simple tomanufacture.

SUMMARY OF THE INVENTION

A termination structure with multiple embedded potential spreadingcapacitive structures (TSMEC) is disclosed for terminating an activearea semiconductor device located along the top surface of a bulksemiconductor layer (BSL). The BSL has a proximal bulk semiconductorwall (PBSW) separating the TSMEC from the active area semiconductordevice, the TSMEC comprises an oxide-filled large deep trench (OFLDT)being bounded by the PBSW and a distal bulk semiconductor wall (DBSW)wherein the OFLDT further comprises:

-   -   a large deep oxide trench of trench size TCS and trench depth        TCD into the BSL; and    -   a plurality of embedded capacitive structures (EBCS) located        inside the large deep oxide trench and sequentially placed        between the PBSW and the DBSW for spatially spreading a device        voltage there across.

The active area semiconductor device may be a trench MOSFET having adrain-source voltage (DSV) between a first electrode (e.g. source) ontop and a second electrode (e.g. drain) on the bottom, wherein the TSMECsupports DSV horizontally.

In a more specific embodiment, a termination structure with multipleembedded potential spreading capacitive structures (TSMEC) is disclosedfor terminating an adjacent trench MOSFET located along top surface of abulk semiconductor layer (BSL) supporting a drain-source voltage (DSV)across the trench MOSFET atop a bottom drain electrode. The BSL has anactive upper source region, an active upper body region, a conductivetrench gate region and a proximal bulk semiconductor wall (PBSW)separating the TSMEC from the trench MOSFET. The TSMEC has anoxide-filled large deep trench (OFLDT) bounded by the PBSW and a distalbulk semiconductor wall (DBSW) having a distal upper body region leveledwith the active upper body region. The OFLDT includes:

-   -   A large deep oxide trench of trench size TCS and trench depth        TCD into the BSL.    -   Numerous embedded capacitive structures (EBCS) located inside        the large deep oxide trench and sequentially placed between the        PBSW and the DBSW for spatially spreading a potential drop equal        to DSV across them.

In a more specific embodiment, the EBCS are made up of a set ofinterleaved conductive embedded polycrystalline semiconductor regions(EPSR) and oxide columns (OXC) of the OFLDT, a proximal EPSR locatednext to the PBSW is electrically connected to a top electrode (e.g.connecting to the active upper source region) and a distal EPSR locatednext to the DBSW is electrically connected to the DBSW.

In a more specific embodiment, the central portion of each OXC furtherembeds a bulk semiconductor finger (BSF) emanating from the BSL beneaththe OFLDT so as to form a number of 3-way interleaved EBCS with the BSLmaterial, the OXC material and the EPSR material.

As an important embodiment:

-   -   At least one of the EPSR is extended through the large deep        oxide trench along a third dimension perpendicular to both TCS        and TCD.    -   At least one of the BSF is extended along the third dimension        through the large deep oxide trench. Correspondingly, the TSMEC        includes a top electrical interconnecting network located atop        the OFLDT and in contact with the extended EPSR and the extended        BSF for effecting a pre-determined desirable electrical        interconnection between the extended EPSR, the extended BSF and        other parts of the TSMEC.

An important example of the top electrical interconnecting network is asfollows:

-   -   The closest EPSR neighbor of the PBSW is electrically connected        to a top electrode (e.g. connecting to the active upper source        region).    -   The second closest EPSR neighbor of the PBSW is electrically        connected to the PB SW.    -   Each of the following EPSR neighbors is electrically connected        to its second closest proximal BSF neighbor.        The benefit associated with the above scheme is accelerated        charging and discharging of the capacitors associated with the        EBCS for high frequency trench MOSFET operation.

A method is disclosed for making a semiconductor device with atermination structure. The termination structure is an oxide-filledlarge deep trench (OFLDT) of trench size TCS and trench depth TCD withmultiple embedded conductive regions (MECR) inside. The method includes:

-   -   Providing a bulk semiconductor layer (BSL) of thickness        BSLT>TCD. Mapping out a large trench top area (LTTA) atop the        BSL with its geometry approximately equal to that of OFLDT.    -   Partitioning the LTTA into interspersed, complementary interim        areas ITA-A and ITA-B each of pre-determined geometry.    -   Creating, into the top BSL surface, numerous interim vertical        trenches by removing bulk semiconductor materials corresponding        to ITA-B till the depth TCD.    -   Converting the bulk semiconductor materials corresponding to        ITA-A into oxide columns and leaving numerous residual trench        spaces in between.    -   Filling the residual trench spaces with a conductive trench        material and shaping it into the MECR between the converted        oxide columns.

In a more specific embodiment, the conductive trench material is made ofpolycrystalline semiconductor and shaping the polycrystallinesemiconductor material into the MECR involves depositing an insulatingmaterial atop till it, together with the oxide columns, embeds thepolycrystalline semiconductor material.

In a more specific embodiment, converting the bulk semiconductormaterials is via thermal oxidation and filling the residual trenchspaces is via conductive material deposition.

As a process variation, converting the bulk semiconductor materialscorresponding to ITA-A into oxide columns further includes leaving aportion of the bulk semiconductor materials corresponding to ITA-Aunconverted so as to form bulk semiconductor fingers (BSF) between theconverted oxide columns.

As an application example, the semiconductor device is a trench MOSFETadjacent the termination structure. Correspondingly:

-   -   Creating numerous interim vertical trenches further includes        simultaneously creating numerous active trenches till the trench        depth TCD in an active area atop the BSL and adjacent the LTTA.    -   Converting the bulk semiconductor materials further includes        simultaneously converting the exposed bulk semiconductor        materials in the active trenches into oxide while leaving a        residual trench space within each of the active trenches.    -   Filling the residual trench spaces further includes        simultaneously filling the residual trench spaces within the        active trenches with a polycrystalline semiconductor material        and shaping it into active polycrystalline gate regions of the        trench MOSFET.        Afterwards, source regions and body regions are implanted into        the upper portion of the BSL between the active polycrystalline        gate regions.

As a more specific application example, the trench MOSFET is a shieldedgate trench MOSFET (SGT MOSFET) having an upper control gate and a lowershielding gate with the lower shielding gate biased to the sourcevoltage. Correspondingly, shaping the polycrystalline semiconductormaterial includes:

-   -   Selectively etching down the polycrystalline semiconductor        material within the active trench till a residual height        defining the lower shielding gate.    -   Filling on top of the lower shielding gate till complete        coverage with an inter-gate insulator material.    -   Fabricating an upper control gate atop the lower shielding gate        but separated from it by the inter-gate insulator material.        These aspects of the present invention and their numerous        embodiments are further made apparent, in the remainder of the        present description, to those of ordinary skill in the art.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more fully describe numerous embodiments of the presentinvention, reference is made to the accompanying drawings. However,these drawings are not to be considered limitations in the scope of theinvention, but are merely illustrative:

FIG. 8A illustrates a prior art integrated power semiconductor devicefrom U.S. Pat. No. 5,998,833 that includes adjacent DEVICE CELLS regionand EDGE TERMINATION region;

FIG. 8B1 and FIG. 8B2 are excerpts from U.S. application Ser. No.12/637,988 illustrating a procedural portion of creating a semiconductordevice structure with an oxide-filled large deep trench terminationportion and another portion of deep active device trenches;

FIG. 8C1 and FIG. 8C2 illustrate top views of a procedural portion ofcreating a semiconductor device structure with an oxide-filled largedeep trench, based on U.S. application Ser. No. 12/637,988;

FIG. 8D1 and FIG. 8D2 illustrate top views of an alternative layoutpattern for the procedural portion shown in FIG. 8C1 and FIG. 8C2;

FIG. 1A illustrates a first embodiment, under the present invention, ofpower semiconductor device structure having a trench MOSFET and atermination structure with multiple embedded potential spreadingcapacitive structures TSMEC;

FIG. 1B illustrates a slight variation of FIG. 1A in the area of biasingthe TSMEC;

FIG. 2A, FIG. 2B and FIG. 2C illustrate a second embodiment, under thepresent invention, of power semiconductor device structure having atrench MOSFET and a TSMEC;

FIG. 3 illustrates an electrical potential distribution across the powersemiconductor device structure of FIG. 1A;

FIG. 4 illustrates an electrical potential distribution across the powersemiconductor device structure of FIG. 2A, FIG. 2B and FIG. 2C;

FIG. 5A through FIG. 5F illustrate fabrication steps for the powersemiconductor device structure of FIG. 1A;

FIG. 6A through FIG. 6K illustrate fabrication steps for a powersemiconductor device structure similar to that shown in FIG. 1A exceptthat the trench MOSFET is a shielded gate trench MOSFET (SGT MOSFET);and

FIG. 7A through FIG. 7D illustrate fabrication steps for a powersemiconductor device structure similar to that shown in FIGS. 2A through2C.

The description above and below plus the drawings contained hereinmerely focus on one or more currently preferred embodiments of thepresent invention and also describe some exemplary optional featuresand/or alternative embodiments. The description and drawings arepresented for the purpose of illustration and, as such, are notlimitations of the present invention. Thus, those of ordinary skill inthe art would readily recognize variations, modifications, andalternatives. Such variations, modifications and alternatives should beunderstood to be also within the scope of the present invention.

In the top view of FIG. C1, as disclosed in U.S. application Ser. No.12/637,988, within a large trench top area (LTTA) 11 a, an initialtrench 12 a is etched in the bulk semiconductor layer 1. Numeroussemiconductor mesas 13 a are left unetched within the large trench toparea (LTTA) 11 a. In FIG. C2, the exposed sidewalls within large trenchtop area (LTTA) 11 a are oxidized, such that the semiconductor mesas 13a are substantially completely oxidized to form high quality oxide mesas13 b. The remaining gaps within the trench 12 b may then be easilyfilled with an oxide deposition step (not shown) to form a large oxidetrench. To those skilled in the art, it should become clear by now thatdifferent patterns for the initial trenches 11 a may be used for thispurpose. For example, in FIG. D1, a closed cell pattern of initialtrenches 12 c is formed in the bulk semiconductor layer 1 within thelarge trench top area (LTTA) 11 c. A network of semiconductor mesas 13 cis left unetched around the initial trenches 12 c. In FIG. D2, all theexposed semiconductor within the large trench top area (LTTA) 11 c areoxidized, such that the network of semiconductor mesas 13 c aresubstantially completely oxidized to form a network of high qualityoxide mesas 13 d. As before, the remaining gaps in trenches 12 d canthen be easily filled with deposited oxide or another suitable material(not shown) to form a large oxide trench.

FIG. 1A illustrates a first embodiment of power semiconductor devicestructure having an active area with trench MOSFET 40 and an adjacenttermination area with termination structure with multiple embeddedpotential spreading capacitive structures (TSMEC) 10. Both the TSMEC 10and the trench MOSFET 40 are located on the top side of a bulksemiconductor layer (BSL) 1 atop a bottom drain electrode (not shownhere to avoid unnecessary obscuring details).

On the trench MOSFET 40 side, the BSL 1 has an active upper sourceregion 42 b, an active upper body region 44 b, a conductive trench gateregion 46 b and a proximal bulk semiconductor wall (PBSW) 48 supportinga drain-source voltage (DSV) vertically across the trench MOSFET 40 andBSL 1. The PBSW 48 has a proximal upper body region 48 a which may beleveled to the same depth as the active upper body region 44 b.Additional active upper source region 42 a, active upper body region 44a and a conductive trench gate region 46 a of the BSL 1 simplyconstitute parallel-connected MOSFET sub-cells of the trench MOSFET 40.Trench gate regions 46 a and 46 b further include gate oxide 43 at thetop of the trench and thick bottom oxide portions 47 at the lower partsof the trench. Regarding top metallization, the trench MOSFET 40 has anactive region metal 41 contacting the various aforementioned uppersource regions and active upper body regions. The PBSW 48 also separatesthe TSMEC 10 from the trench MOSFET 40, though it could also include anactive trench MOSFET.

The TSMEC 10 has an oxide-filled large deep trench (OFLDT) 12 bounded bythe PBSW 48 and a distal bulk semiconductor wall (DBSW) 25. The DBSW 25has a distal upper body type doped region 25 a leveled, referencing thebottom surface of BSL 1, with the active upper body region 44 b. TheOFLDT 12 includes:

-   -   a large deep oxide trench 14 of trench size TCS and trench depth        TCD into the BSL 1. Numerous conductive embedded polycrystalline        semiconductor regions (EPSR) 16 a, 17 a, 18 a, 19 a located        inside the large deep oxide trench 14 and sequentially placed        between the PBSW 48 and the DBSW 25 for horizontally spatially        spreading an electrical potential drop equal to DSV across them.

Thus, an embedded capacitive structures (EBCS) is formed with the EBCSmade up of a set of interleaved conductive EPSRs 16 a, 17 a, 18 a, 19 aand oxide columns (OXC) 15 b, 16 b, 17 b, 18 b, 19 b of the OFLDT 12.The oxide extends an entire space between adjacent EPSRs. The proximalEPSR located next to the PBSW is electrically connected to a topelectrode. Here, a proximal EPSR 16 a located next to the PBSW 48 iselectrically connected to the various active upper source regions viathe active region metal 41 while a distal EPSR 19 a located next to theDBSW 25 is left electrically floating within the EBCS.

FIG. 1B illustrates another embodiment that is a slight variation ofFIG. 1A. Here, the EPSR 19 a located next to the DBSW 25 is electricallyconnected to a termination region metal 27 to create a different spatialspreading pattern of DSV across the EPSRs 16 a, 17 a, 18 a, 19 a. As anexample, the termination region metal 27 can be connected to theelectrical potential of a bottom drain to suppress an otherwise lateralparasitic transistor conduction between the distal upper body region 25a and the various active upper body regions via the BSL 1. Externally,the parasitic transistor conduction would manifest itself as anundesirable drain-source leakage current of the trench MOSFET 40.

FIG. 2A, FIG. 2B and FIG. 2C illustrate a second embodiment of powersemiconductor device structure having a trench MOSFET 40 and a TSMEC 10.Notice that FIG. 2A and FIG. 2C are sectional views in X-Z plan whileFIG. 2B is a top view of X-Y plan. Inside the OFLDT 12, the centralportion of each OXC embeds a bulk semiconductor finger (BSF) emanatingfrom the BSL 1 beneath the OFLDT 12 so as to form a number of 3-wayinterleaved embedded capacitive structures (EBCS) with the BSL material,the OXC material and the EPSR material. For example, the central portionof OXC 16 b embeds a bulk semiconductor finger (BSF) 16 c emanating fromthe BSL 1 and having a semiconductor finger upper body region (SFUB) 16d. For another example, the central portion of OXC 17 b embeds a bulksemiconductor finger (BSF) 17 c having a SFUB 17 d. As a third example,the central portion of OXC 18 b embeds a bulk semiconductor finger (BSF)18 c having a SFUB 18 d. Furthermore, one or more of the embeddedpolycrystalline semiconductor regions EPSRs (16 a, 17 a, 18 a, 19 a) canbe extended through the large deep oxide trench 14 along a thirddimension perpendicular to both TCS and TCD. Likewise, one or more ofthe BSFs (16 c, 17 c, 18 c) can be extended along the third dimensionthrough the large deep oxide trench 14. Correspondingly, the TSMEC 10includes a top electrical interconnecting network 20 located atop theOFLDT 12 and in contact with the various extended EPSRs and the extendedBSFs for effecting a pre-determined desirable electrical interconnectionbetween the extended EPSRs, the extended BSFs and other parts of theTSMEC 10 in order to spread the electric field in the terminationregion. A specific example of the top electrical interconnecting network20 is as follows:

-   -   EPSR 16 a is electrically connected to the various active upper        source regions through contact via 21 a, a top metal trace 20 a        and the active region metal 41.    -   EPSR 17 a is electrically connected to the PBSW 48 through        contact vias 21 b and a top metal trace 20 b.    -   EPSR 18 a is electrically connected to the BSF 16 c through        contact vias 21 c and a top metal trace 20 c.    -   EPSR 19 a is electrically connected to the BSF 17 c through        contact vias 21 d and a top metal trace 20 d.        A benefit associated with the above scheme is accelerated        charging and discharging of the capacitors associated with the        EBCS for high frequency trench MOSFET operation. To those        skilled in the art, by now it should become clear that numerous        other specific interconnecting topologies of the top electrical        interconnecting network 20 exist for spatially spreading the DSV        across the EBCS each with its own benefits.

FIG. 3 illustrates an electrical potential distribution 200 across(along the X-axis) the power semiconductor device structure of FIG. 1A.As illustrated, the EBCS horizontally spatially spread a DSV of about110 Volts across it with the electrical potential staying constantacross each of the conductive EPSRs (16 a, 17 a, 18 a, 19 a)

FIG. 4 illustrates an electrical potential distribution 202 across(along the X-axis) the power semiconductor device structure of FIG. 2A,FIG. 2B and FIG. 2C. While the EBCS also spatially spread a DSV of about110 Volts across it, the top electrical interconnecting network 20causing the electrical potential to be the same for each of thefollowing pairs of regions:

-   -   (EPSR 16 a, active region metal 41)    -   (EPSR 17 a, proximal upper body region 48 a)    -   (EPSR 18 a, SFUB 16 d)    -   (EPSR 19 a, SFUB 17 d)

FIG. 5A through FIG. 5F illustrate fabrication steps for the powersemiconductor device structure of FIG. 1A. In FIG. 5A, a BSL 1 ofthickness BSLT>TCD has been mapped into:

-   -   A large trench top area (LTTA) 2 b atop the BSL 1 with its        geometry approximately equal to that of OFLDT 12.    -   An active device trench top area ADTTA 3 b atop the BSL 1 with        its geometry approximately equal to that of the trench MOSFET        40.        It is remarked that FIG. 5A through FIG. 5F are not to scale as,        for example, the BSLT is usually substantially thicker than the        TCD. The LTTA 2 b is partitioned into interspersed,        complementary interim areas ITA-A and ITA-B each of        pre-determined geometry. The top surface of BSL 1 is then        anisotropically etched to a depth TCD through a windowed mask to        create the following:    -   Interim vertical trenches 60 b, 61 b, 62 b, 63 b within the LTTA        2 b corresponding to ITA-B.    -   Active device trenches 50 b, 51 b within the ADTTA 3 b.

FIG. 5B illustrates the completed conversion of:

-   -   Bulk semiconductor materials of semiconductor mesas between the        interim vertical trenches 60 b, 61 b, 62 b, 63 b (corresponding        to ITA-A) into converted oxides 70 b, 71 b, 72 b separated by        residual spaces 90 b, 91 b, 92 b, 93 b.    -   Trench walls of the active device trenches 50 b, 51 b into        converted oxides 75 b, 76 b.        The conversion can be carried out through thermal oxidation        resulting in, for example, a silicon dioxide layer thickness        from ˜2500 Angstrom to ˜5000 Angstrom. Notice that due to        substantial difference of molecular volumetric density between        the semiconductor material and its oxide, the size of the        converted oxides 70 b, 71 b, 72 b has “grown” to be        substantially bigger than their predecessor semiconductor mesas.        Notice also that at the bottom of the converted oxides 70 b, 71        b, 72 b there may be residual notches 95 where the oxides at the        bottom of the trenches meet. Simultaneously, the same oxide        conversion process has also converted the surface portion of the        semiconductor mesas between the active device trenches 50 b, 51        b into converted oxides 75 b and 76 b separated by residual        spaces 80 b, 81 b.

FIG. 5C illustrates the completion of filling up the residual spaces (90b, 91 b, 92 b, 93 b) and (80 b, 81 b) by depositing polycrystallinesilicon fill 150 b, a conductive material, up to a polysilicon fillsurface 151 b. As a process variation although not graphicallyillustrated here, the polysilicon fill 150 b can be deposited up to ahigher surface then etched down to the polysilicon fill surface 151 b.

FIG. 5D and FIG. 5E illustrate steps for shaping the depositedpolysilicon fill 150 b into multiple embedded conductive regions (MECRs)between the converted oxides 75 b, 76 b, 70 b, 71 b, 72 b. In FIG. 5Dthe deposited polysilicon fill 150 b is preferentially etched back tillan etched back polysilicon surface 152 b below the top of the convertedoxides 70 b-72 b and 75 b-76 b. A mask 33, e.g. using silicon nitride,is then applied over the termination region, and the polysilicon fill150 b is etched back to surface 152 c in the active area trenches. Anoxide etch then removes oxide from the exposed sidewalls. In FIG. 5E, agate oxide 43 is grown on the exposed sidewalls, followed by apolysilicon fill to form active gate trenches 46 a and 46 b. The mask 33is removed and an oxide layer 153 b is formed atop thus embedding thepolysilicon fills 16 a through 19 a. Body and source implantationsfollowed by dopant drive-in are carried out to form the various activeupper body regions 44 a, 44 b, proximal upper body region 48 a, distalupper body region 25 a and active upper source regions 42 a, 42 b. Asmentioned before under U.S. Pat. No. 5,998,833, an extra body mask isconventionally needed to block body implant from the EDGE TERMINATIONregion. However, with the TSMEC 10 of the present invention this extrabody mask can be eliminated for the trench MOSFET 40 since the distalcapacitor (located next to DBSW 25) has a high electrical potentialclose to the drain due to the electric field spreading across the EBCS,hence is capable of suppressing an otherwise lateral parasitictransistor conduction between the distal upper body region 25 a and thevarious active upper body regions via BSL 1. Comparing with thetermination structure of U.S. application Ser. No. 12/637,988 that needsan extra windowed mask 110 b to block processing steps for the ADTTA 3 bfrom affecting the LTTA 2 b, the process of making the present inventionTSMEC 10 can advantageously skip this extra mask.

FIG. 5F illustrates the completed power semiconductor device structureof FIG. 1A following contact fabrication and active region metal 41deposition. Notice the newly deposited thick oxide on the top and itspatterning to allow the active region metal 41 go through and contactthe active upper body regions 44 a, 44 b, the proximal upper body region48 a and the active upper source regions 42 a, 42 b. Notice also thatthe shaped MECR between the converted oxides 75 b and 76 b has turnedinto the conductive trench gate region 46 a of the trench MOSFET 40.

Turning now back to the step of bulk semiconductor material conversioninto converted oxides already illustrated in FIG. 5B. By now it shouldbecome clear to those skilled in the art that, to instead make the powersemiconductor device structure of FIG. 2A, the widths of interim areasITA-A and ITA-B can be adjusted so as to keep an internal portion of thebulk semiconductor materials corresponding to ITA-A unconverted. As aresult, numerous BSFs 16 c, 17 c, 18 c are formed with each BSF locatedbetween converted OXCs. For example, the BSF 16 c is located between theOXC 16 b, etc. It is further pointed out that, the details of making thetop electrical interconnecting network 20, being part of the process ofcontact fabrication and active region metal 41 deposition, is well knownin the art hence not illustrated here.

FIG. 6A through FIG. 6K illustrate fabrication steps for a powersemiconductor device structure similar to that shown in FIG. 1A exceptthat, as shown in FIG. 6K, the trench MOSFET is now a shielded gatetrench MOSFET (SGT MOSFET) 166. The SGT MOSFET 166 has an upperpolysilicon gate region 165 and a lower shield region 160 with the lowershield region 160 biased to the source voltage. As is well known in theart, functionally the lower shield region 160 shields the upperpolysilicon gate region 165 from the drain potential thus reducinggate-drain capacitance Cgd and improving breakdown voltage.

The fabrication steps corresponding to FIG. 6A through FIG. 6D remainthe same as those steps corresponding to FIG. 5A through FIG. 5D before.In FIG. 6E a windowed lower gate mask 110 b is formed on top of thestructure-in-progress then patterned to reveal the etched backpolysilicon surface 152 b inside the leftmost trench that is thenselectively etched down to form the lower shield region 160 with a lowershield surface 160 a. Afterwards, the windowed lower gate mask 110 b isstripped off. In FIG. 6F oxide deposits 162 are formed atop thusembedding the lower shield region 160 and the polysilicon fills 150 b.With a chemical mechanical polishing (CMP) process, the oxide deposits162 are thinned down to 1000 Angstrom˜3000 Angstrom above siliconsurface, or directly thinned down to the silicon surface.

In FIG. 6G a windowed upper gate mask 162 b is formed on top of thestructure-in-progress then patterned to reveal the surface portion ofthe oxide deposit 162 that lies directly above the leftmost trench. Thecorresponding portion of the oxide deposit 162 is then etched down toform an oxide deposit 162 with an etched oxide surface 163. Notice thatthe thus formed oxide deposit 162 inside the leftmost trench would laterbecome an inter-gate insulation between the lower shield region 160 andthe upper polysilicon gate region 165. The windowed upper gate mask 162b is then stripped off.

FIG. 6H and FIG. 6I illustrate the fabrication of the upper polysilicongate region 165. As shown in FIG. 6H, gate oxide 164 is formed all overthe top of the structure-in-progress, including those of specialimportance formed on the inner side surfaces of the leftmost trench. Thegate oxide 164 can be thermally grown. In FIG. 6I, the upper polysilicongate region 165 is formed with polysilicon deposition and etched back.

In FIG. 6J oxide deposit 153 b are formed atop thus embedding the upperpolysilicon gate region 165 and the polysilicon fill 150 b. Body andsource implantations followed by dopant drive-in are carried out to formthe various active upper body regions 44 a, 44 b, proximal upper bodyregion 48 a, distal upper body region 25 a and active upper sourceregions 42 a, 42 b.

FIG. 6K illustrates the completed power semiconductor device structurewith an SGT MOSFET 166 and a TSMEC 10 following contact fabrication andactive region metal 41 deposition. Notice the newly deposited thickoxide on the top and its patterning to allow the active region metal 41go through and contact the active upper body regions 44 a, 44 b, theproximal upper body region 48 a and the active upper source regions 42a, 42 b.

FIG. 7A through 7D illustrate steps for forming a semiconductor devicesuch as that shown in FIGS. 2A through 2C. In FIG. 7A, trenches areetched into a BSL 1; the trenches are active trenches 201 for the MOSFETactive cell and termination trenches 202 for forming a TSMEC having anumber of 3-way interleaved embedded capacitive structures (EBCS). Thetermination trenches 202 are spaced apart such that after an oxidizingstep to form an oxide layer 203 on all exposed semiconductor surfaces,including the trench sidewalls, there remain semiconductor mesas 204between termination trenches 202, as shown in FIG. 7B. In FIG. 7C, apolysilicon layer 265 is deposited, filling active and terminationtrenches 201 and 202. Following additional processing steps such asthose already detailed above, the final structure of FIG. 2A can beformed, as shown in FIG. 7D, in which the remaining semiconductor mesas204 have been turned into the bulk semiconductor finger (BSF) 16 c, 17c, and 18 c.

A termination structure with multiple embedded potential spreadingcapacitive structures (TSMEC) and its fabrication method have beeninvented for terminating an adjacent trench MOSFET. Throughout thedescription and drawings, numerous exemplary embodiments were given withreference to specific configurations. It will be appreciated by those ofordinary skill in the art that the present invention can be embodied innumerous other specific forms and those of ordinary skill in the artwould be able to practice such other embodiments without undueexperimentation. The scope of the present invention, for the purpose ofthe present patent document, is hence not limited merely to the specificexemplary embodiments of the foregoing description, but rather isindicated by the following claims. Any and all modifications that comewithin the meaning and range of equivalents within the claims areintended to be considered as being embraced within the spirit and scopeof the present invention.

We claim:
 1. A termination structure with multiple embedded potentialspreading capacitive structures (TSMEC) for terminating an active areasemiconductor device being located along the top surface of a bulksemiconductor layer (BSL) of a first conductivity type having a proximalbulk semiconductor wall (PBSW) separating the TSMEC from the active areasemiconductor device, the TSMEC comprises an oxide-filled large deeptrench (OFLDT) being bounded by the PBSW and a distal bulk semiconductorwall (DBSW) wherein the OFEDT further comprises: an oxide trench oftrench size (TCS) and trench depth (TCD) into the BSL wherein TCSextends from the PBSW to the DBSW; and a plurality of embeddedcapacitive structures (EBCS) each formed of a conductive embeddedpolycrystalline semiconductor region (EPSR) surrounded by an oxidecolumn (OXC) located inside the oxide trench, the plurality of EBCSsequentially placed between the PBSW and the DBSW and completely fillingan entire space between the PBSW and the DBSW wherein the oxide extendsan entire space between adjacent EPSR; wherein a proximal EPSR locatednext to the PBSW is electrically connected to a doped region of a secondconductivity type opposite the first conductivity type disposed on a topportion of the PBSW.
 2. The TSMEC of claim 1 wherein a distal EPSRlocated next to the DBSW is electrically connected to a terminationregion metal disposed over the DBSW.
 3. The TSMEC of claim 2 wherein thetermination region metal being electrically connected to a drainpotential.
 4. The TSMEC of claim 2 wherein the DBSW further comprises adoped region of the second conductivity type disposed on a top portionof the DBSW.
 5. The TSMEC of claim 1 wherein the proximal EPSR locatednext to the PBSW is electrically connected to a top electrode.
 6. Atermination structure with multiple embedded potential spreadingcapacitive structures (TSMEC) for terminating an active areasemiconductor device being located along the top surface of a bulksemiconductor layer (BSL) of a first conductivity type having a proximalbulk semiconductor wall (PBSW) separating the TSMEC from the active areasemiconductor device, the TSMEC comprises an oxide-filled large deeptrench (OFLDT) being bounded by the PBSW and a distal bulk semiconductorwall (DBSW), wherein the OFLDT further comprises: an oxide trench oftrench size (TCS) and trench depth (TCD) into the BSL; and a pluralityof embedded capacitive structures (EBCS) each formed of a conductiveembedded polycrystalline semiconductor region (EPSR) surrounded by anoxide located inside the oxide trench, the plurality of EBCSsequentially placed between the PBSW and the DBSW and completely fillingan entire space between the PBSW and the DBSW; wherein a proximal EPSRlocated next to the PBSW is electrically connected to a top electrodeand is electrically connected to a doped region of a second conductivitytype opposite the first conductivity type disposed on a top portion ofthe PBSW; and wherein the DBSW further comprises: a doped region of thesecond conductivity type disposed on a top portion of the DBSW.
 7. TheTSMEC of claim 1 wherein a distal EPSR located next to the DBSW iselectrically connected to a termination region metal disposed over theDBSW.
 8. The TSMEC of claim 2 wherein the termination region metal beingelectrically connected to a drain potential.